| Package Type |
TO – 263 |
/ |
/ |
| Configuration |
Single – transistor configuration |
/ |
/ |
| Polarity |
N – Channel (P – type current) |
/ |
/ |
| Drain – Source Voltage (VDS) |
-30 |
V |
Maximum |
| Gate – Source Voltage (VGS) |
±20 |
V |
/ |
| Threshold Voltage (Vthtyp) |
-3 |
V |
/ |
| On – Resistance (RDS(on)) |
3 mΩ @ VGS = 10V |
mΩ |
Typical value |
| Maximum Drain Current (ID) |
-100 |
A |
/ |
| Technology Type |
Trench technology |
/ |
/ |
| Maximum Power Dissipation |
Evaluable according to application requirements |
/ |
Specific value depends on load and working environment |
| Switching Speed |
Fast switching characteristics |
/ |
Suitable for high – frequency applications |
| Operating Temperature Range |
Wide range |
/ |
Depends on package and design requirements |
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