描述
| Parameter | Value | Unit | Remarks |
|---|---|---|---|
| Drain-Source Voltage (VDS) | 1200 | V | Rated drain-source voltage |
| Gate-Source Voltage Range (VGE(±V)) | -10V to +22V | V | / |
| Typical Gate Threshold Voltage (Vthtyp(V)) | 2 to 4 | V | / |
| Typical On-Resistance @ VGS=18V (RDS(on)@VGS=18Vtyp(mΩ)) | 21 | mΩ | At gate-source voltage of 18V |
| Rated Drain Current (ID (A)) | 100 | A | / |
| Technology | SiC-S | / | Using Silicon Carbide-S technology |
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