描述
| Parameter | Value | Unit |
|---|---|---|
| Product Name | VBP112MC30 | / |
| VB Package | TO247 | / |
| Configuration | Single N-type MOSFET | / |
| Drain-Source Voltage (VDS(V)) | 1200 | V |
| Gate-Source Voltage (VGE(±V)) | -10 / +22 | V |
| Typical Threshold Voltage (Vthtyp(V)) | 2~4 | V |
| Typical On-Resistance @ VGS=18V (RDS(on)@VGS=18Vtyp(mΩ)) | 80 | mΩ |
| Drain Current (ID（A）) | 30 | A |
| Technology | SiC-S | / |
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