| Drain-Source Voltage (VDS(V)) |
1700 |
V |
Nominal drain-source voltage, indicating normal operation within this voltage range |
| Gate-Source Voltage Range (VGE(±V)) |
-10V to +22V |
V |
Can accept control signals from -10V to +22V |
| Typical Gate-Source Threshold Voltage (Vthtyp(V)) |
2 to 4 |
V |
Indicates that a voltage above 2 to 4V needs to be applied to turn on the transistor |
| Typical On-Resistance @ VGS=18V (RDS(on)@VGS=18Vtyp(mΩ)) |
1500 |
mΩ |
On-state typical on-resistance when 18V is applied between gate and source, indicating resistance performance in the on-state |
| Maximum Drain Current (ID (A)) |
6 |
A |
Indicates the maximum operating current it can withstand |
| Technology |
SiC (Silicon Carbide) |
/ |
Made of silicon carbide semiconductor material |
评价
目前还没有评价