描述
| Parameter | Value | Unit |
|---|---|---|
| Product Model | VBPB112MI40 | / |
| Package | TO3P | / |
| Structure | IGBT + FRD | / |
| Collector – Emitter Withstand Voltage | 1200 | V |
| Gate – Emitter Voltage | ±30 | V |
| Gate – Emitter Threshold Voltage (VGEth) | 5.5 | V |
| VCEsat (at VGE = 15V) | 1.55 | V |
| Maximum Collector Current | 40 | A |
| Technology | FS | / |
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