描述
| Parameter | Value | Unit |
|---|---|---|
| Model Number | VBPB112MI50 | / |
| Package | TO3P | / |
| Configuration | IGBT + FRD | / |
| Maximum Withstand Voltage | 1200 | V |
| Gate – Source Voltage (±V) | ±30 | V |
| Gate Threshold Voltage (VGEth) | 5.5 | V |
| Collector – Emitter Voltage in Saturation (VCEsat) @ VGE = 15V | 1.55 | V |
| Collector Current (ICE) | 50 | A |
| Technology | FS | / |
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